Published
Photolumineszenz-Mapper-NIR - PR1150863-3240-W
Notice number: ocds-mnwr74-3cd3d648-cb02-4da1-841f-34b557cea2e4
KEY INFORMATION
- Submission deadline
- • Oct 5, 2026
- Location
- 🇩🇪 Germany
- Contracting authority
- Fraunhofer-Gesellschaft, Einkauf B12
- Accepted Languages
- DEU
- Tender type
- Goods
- Contract Value
- Published date
- Sep 3, 2026
TENDER DESCRIPTION
Photoluminescence mapping is a versatile method for characterisation of direct semiconductors. In epitaxy, typically whole wafers get PL-mapped to obtain information on band gap, uniformity, layer thickness or cavity dip. The desired tool is capable of measuring in a spectral range from 800–2150 nm, due to the (AlInGa)(AsP) heterostructures which are subject of investigations. The setup is capable of mapping entire 2–6 inch (50 mm–150 mm) wafers. Options: 1. Excitation density tuning for Laser 1 (automated) 2. Laser 2 (DPSS) for InGaAs-contact bleaching out for layers with thickness 50–200 nm 3. Sample holder: Flexible sample positioning on the entire chuck with vacuum clamping 4. Sample holder: Mount for DataRay BladeCam2
TENDER BRIEF
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