Vergabeverfahren zur Lieferung einer Gasphasenabscheidungsanlage

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The contract notice covers the supply and commissioning-ready handover, including function test, instruction and acceptance of a system for plasma-enhanced chemical gas-phase deposition (PECVD) with an inductively coupled plasma source (ICP) for producing high-quality material films with precisely defined layer thicknesses in the nanometer to micrometer range. The planned ICP-PECVD system is intended to enable the targeted deposition of dielectric thin films with controllable optical properties and precisely controllable layer thicknesses via in-situ monitoring. High-quality dielectric layers for optical passivation, optical waveguides and multilayer systems, as well as as hard masks for high-resolution lithography processes, are to be deposited. As part of our research activities, silicon dioxide, silicon nitride, amorphous silicon and diamond-like carbon layers can be optimised to be deposited with a new system. Due to the requirements of the approval procedure for large equipment, the maximum available funds are limited and end at EUR 806,000 (including value added tax or comparable, customs duties and any cash discounts). Tenders that exceed this limit cannot be considered.…

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