Vergabeverfahren zur Lieferung einer Gasphasenabscheidungsanlage

TENDER DESCRIPTION

The contract includes the supply and ready-for-operation handover, including a functional test, instruction and acceptance of a system for plasma-enhanced chemical gas-phase deposition (PECVD) with an inductively coupled plasma source (ICP) for producing high-quality material films with precisely defined layer thicknesses in the nanometer–micrometer range. The planned ICP-PECVD system is intended to enable targeted deposition of dielectric thin films with controllable optical properties and precisely controllable layer thicknesses through in-situ monitoring. High-quality dielectric layers for optical passivation, optical waveguides and multi-layer systems, as well as as hard masks for high-resolution lithography processes, are to be deposited. As part of our research activities, silicon dioxide, silicon nitride, amorphous silicon and diamond-like carbon layers can be optimised using a new system. Due to the requirements of the approval procedure for large-scale equipment, the maximum available financial resources are limited and end at EUR 806,000 (including value added tax or comparable, customs duties and any discounts). Tenders that exceed this limit cannot be considered.…

TENDER BRIEF

TENDER DOCUMENTS