Hochtemperatur/ LP-CVD System für Mikrosystemtechnik und Nanotechnologie

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1 unit High-temperature system with 8 process stations / tubes with loading devices for high-temperature and LP-CVD processes, primarily for monocrystalline silicon wafers. - Footprint of the entire system not greater than 400 cm x 600 cm x 295 cm (L x W x H). - If the overall system consists of multiple individual systems/parts, all systems must be placeable within the specified footprint. - Excluded from the specified footprint are exclusively a possible operating console; this may be housed separately on a table measuring max. 180 cm x 80 cm, and the vacuum pumps, which may be housed within a service area. - For two coupled individual systems: a configuration mirrored on the rear wall is to be provided (one system with loading stations on the right, one system with loading stations on the left). - All 8 process stations are to be designed for the parallel processing of at least 13 wafer pieces per process. - The processable wafer diameters are at least: o 150 mm and o 100 mm - The process stations are to be configured as horizontally arranged process tubes, each with one quartz or SiC tube and each with an automatic/motorized loading station. - The loading arm (paddle) is…

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